TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 200 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -60.0 V |
Current Rating | -150 mA |
Case/Package | SOT-23-3 |
Power Rating | 0.3 W |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 300 mW |
Breakdown Voltage (Collector to Emitter) | 60 V |
hFE Min | 100 @150mA, 10V |
hFE Max | 300 |
Input Power (Max) | 300 mW |
DC Current Gain (hFE) | 100 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 350 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.05 mm |
Size-Width | 1.4 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ |
This specially engineered PNP MMBT2907A-7-F GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 350 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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