| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 200 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -600 mA |
| Case/Package | SOT-23-3 |
| Polarity | PNP |
| Power Dissipation | 0.33 W |
| Rise Time | 40 ns |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 0.6A |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 330 mW |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 330 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Last Time Buy |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | 150℃ (TJ) |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP MMBT2907ALT1HTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
Infineon
9 Pages / 0.52 MByte
Infineon
34 Pages / 0.2 MByte
Infineon
1 Pages / 0.14 MByte
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