TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 250 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 40.0 V |
Case/Package | SOT-23-3 |
Power Rating | 0.3 W |
Number of Positions | 3 Position |
Power Dissipation | 300 mW |
Breakdown Voltage (Collector to Emitter) | 40 V |
hFE Min | 100 @150mA, 1V |
hFE Max | 300 |
Input Power (Max) | 310 mW |
DC Current Gain (hFE) | 100 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 310 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.05 mm |
Size-Width | 1.4 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The three terminals of this NPN MMBT4401-7-F GP BJT from Diodes Zetex give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 310 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
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