TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 250 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 40.0 V |
Current Rating | 600 mA |
Case/Package | SOT-23-3 |
Power Rating | 300 mW |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 225 mW |
Breakdown Voltage (Collector to Emitter) | 40 V |
Continuous Collector Current | 0.6A |
hFE Min | 20 |
Input Power (Max) | 300 mW |
DC Current Gain (hFE) | 250 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 0.94 mm |
Operating Temperature | -55℃ ~ 150℃ |
The MMBT4401LT1G is a 40V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
● Halogen-free/BFR-free
● AEC-Q101 qualified and PPAP capable
● 60VDC Collector to base voltage (VCBO)
● 6VDC Emitter to base voltage (VEBO)
● 900mADC Peak collector current
● 556°C/W Thermal resistance, junction to ambient
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