| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 250 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 600 mA |
| Case/Package | SOT-23-3 |
| Power Rating | 300 mW |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 225 mW |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 0.6A |
| hFE Min | 20 |
| Input Power (Max) | 300 mW |
| DC Current Gain (hFE) | 250 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The MMBT4401LT1G is a 40V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
● Halogen-free/BFR-free
● AEC-Q101 qualified and PPAP capable
● 60VDC Collector to base voltage (VCBO)
● 6VDC Emitter to base voltage (VEBO)
● 900mADC Peak collector current
● 556°C/W Thermal resistance, junction to ambient
ON Semiconductor
7 Pages / 0.14 MByte
ON Semiconductor
14 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
1 Pages / 0.13 MByte
Avic Technology
SOT-23 Plastic-Encapsulate Transistors
Rectron Semiconductor
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
SynSemi
Small Signal Bipolar Transistor, 0.6A I(C), NPN
Micro Commercial Components
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
Leshan Radio
General Purpose Transistor(NPN Silicon)
Willas
General Purpose Transistor
Jiangsu Changjiang Electronics Technology
Tigal
NPN EPITAXIAL PLANAR TRANSISTOR
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
