| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 250 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 600 mA |
| Case/Package | SC-70-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 150 mW |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 0.6A |
| hFE Min | 100 @150mA, 1V |
| Input Power (Max) | 150 mW |
| DC Current Gain (hFE) | 20 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Width | 1.24 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The three terminals of this NPN MMBT4401WT1G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
ON Semiconductor
7 Pages / 0.14 MByte
ON Semiconductor
11 Pages / 0.1 MByte
ON Semiconductor
Trans GP BJT NPN 40V 0.6A 3Pin SC-70 T/R
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