TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 200 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -40.0 V |
Current Rating | -600 mA |
Case/Package | SOT-23-3 |
Power Rating | 0.3 W |
Polarity | PNP |
Power Dissipation | 300 mW |
Gain Bandwidth Product | 200 MHz |
Breakdown Voltage (Collector to Emitter) | 40 V |
hFE Min | 100 @150mA, 2V |
hFE Max | 300 |
Input Power (Max) | 300 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.05 mm |
Size-Width | 1.4 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The versatility of this PNP MMBT4403-7-F GP BJT from Diodes Zetex makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 350 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
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