| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 200 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -40.0 V |
| Current Rating | -600 mA |
| Case/Package | SOT-523 |
| Polarity | PNP |
| Power Dissipation | 0.15 W |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 0.6A |
| hFE Min | 100 @150mA, 2V |
| hFE Max | 300 |
| Input Power (Max) | 150 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Width | 0.8 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP MMBT4403T-7-F general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
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