| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 300 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SC-70-3 |
| Polarity | PNP |
| Power Dissipation | 0.4 W |
| Breakdown Voltage (Collector to Emitter) | 150 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 60 @10mA, 5V |
| Input Power (Max) | 400 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP MMBT5401WT1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 400 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V.
ON Semiconductor
3 Pages / 0.08 MByte
ON Semiconductor
8 Pages / 0.14 MByte
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