MMBT5550 Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	BJTs
Case Package:	SOT-23-3
Description:	Trans GP BJT NPN 140V 0.6A 3Pin SOT-23
Documentation:	MMBT5550 Datasheet (6 Pages)Package Outline Dimension on5 Page Part Numbering System on2 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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MMBT5550 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Number of Positions	3 Position
Power Dissipation	225 mW
Breakdown Voltage (Collector to Emitter)	140 V
hFE Min	60 @10mA, 5V
Input Power (Max)	350 mW
DC Current Gain (hFE)	60
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	350 mW