| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 140 V |
| Current Rating | 600 mA |
| Case/Package | SOT-23-3 |
| Polarity | NPN |
| Power Dissipation | 225 mW |
| Breakdown Voltage (Collector to Emitter) | 140 V |
| hFE Min | 60 @10mA, 5V |
| Input Power (Max) | 225 mW |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Look no further than ON Semiconductor"s NPN MMBT5550LT3G general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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