MMBT5551 Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	BJTs
Case Package:	SOT-23-3
Description:	Trans GP BJT NPN 160V 0.6A 3Pin SOT-23 T/R
Documentation:	MMBT5551 Datasheet (9 Pages)Package Outline Dimension on6 Page 7 Page 8 Page Package Footprint Pad Layout on8 Page Part Numbering System on1 Page MMBT5551 Application Note (6 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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MMBT5551 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Frequency	300 MHz
Number of Pins	3 Pin
Voltage Rating (DC)	160 V
Current Rating	600 mA
Case/Package	SOT-23-3
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	350 mW
Breakdown Voltage (Collector to Emitter)	160 V
hFE Min	80 @10mA, 5V
Input Power (Max)	350 mW
DC Current Gain (hFE)	80
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	350 mW