TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 160 V |
Current Rating | 600 mA |
Case/Package | SOT-23-3 |
Power Rating | 225 mW |
Polarity | NPN |
Power Dissipation | 225 mW |
Breakdown Voltage (Collector to Emitter) | 160 V |
Continuous Collector Current | 0.6A |
hFE Min | 80 @10mA, 5V |
Input Power (Max) | 225 mW |
DC Current Gain (hFE) | 80 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 225 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 3.04 mm |
Size-Width | 2.64 mm |
Size-Height | 1.11 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Design various electronic circuits with this versatile NPN MMBT5551LT3G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
7 Pages / 0.17 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
6 Pages / 0.17 MByte
Motorola
600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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