| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -1.00 A |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 310 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Continuous Collector Current | 1A |
| hFE Min | 100 @500mA, 2V |
| Input Power (Max) | 310 mW |
| DC Current Gain (hFE) | 40 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 710 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The MMBT589LT1G is a 1A PNP high current Bipolar Transistor designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. It is a miniature surface-mount device featuring ultra-low saturation voltage VCE(sat) and high current gain capability.
● Low RDS (ON) provides higher efficiency and extends battery life
● Saves board space
● AEC-Q101 qualified and PPAP capable
ON Semiconductor
6 Pages / 0.11 MByte
ON Semiconductor
6 Pages / 0.14 MByte
ON Semiconductor
5 Pages / 0.14 MByte
ON Semiconductor
6 Pages / 0.07 MByte
Motorola
1000mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
