| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 200 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 350 V |
| Current Rating | 500 mA |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 225 mW |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 20 @50mA, 10V |
| Input Power (Max) | 225 mW |
| DC Current Gain (hFE) | 15 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 225 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3.04 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1.11 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The MMBT6517LT1G is a NPN high voltage Bipolar Transistor designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface-mount applications.
● Low RDS (ON) provides higher efficiency and extends battery life
● Saves board space
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Leshan Radio
High Voltage Transistors(NPN Silicon)
Freescale
High Voltage Transistors(NPN Silicon)
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