| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 200 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -350 V |
| Current Rating | -500 mA |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 20 @50mA, 10V |
| hFE Max | 200 |
| Input Power (Max) | 225 mW |
| DC Current Gain (hFE) | 40 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3.04 mm |
| Size-Width | 2.64 mm |
| Size-Height | 1.11 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their PNP MMBT6520LT1G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.
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