| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 500 mA |
| Case/Package | SOT-23-3 |
| Power Rating | 225 mW |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 225 mW |
| Gain Bandwidth Product | 100 MHz |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 100 @100mA, 1V |
| Input Power (Max) | 225 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The MMBTA06LT1G is a 80V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
● Halogen-free/BFR-free
● 80VDC Collector to base voltage (VCBO)
● 4VDC Emitter to base voltage (VEBO)
● 556°C/W Thermal resistance, junction to ambient
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