TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 125 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 100 mA |
Case/Package | SOT-23-3 |
Polarity | NPN |
Power Dissipation | 300 mW |
Breakdown Voltage (Collector to Emitter) | 30 V |
Continuous Collector Current | 0.3A |
hFE Min | 10000 @100mA, 5V |
Input Power (Max) | 300 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Gain Bandwidth | 125MHz (Min) |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.05 mm |
Size-Width | 1.4 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Higher current yields within your circuit is what you will get with Diodes Zetex"s NPN MMBTA13-7-F Darlington transistor. This product"s maximum continuous DC collector current is 0.3 A, while its minimum DC current gain is 10000@100mA@5 V|5000@10mA@5V. It has a maximum collector emitter saturation voltage of 1.5@100uA@100mA V. This Darlington transistor array"s maximum emitter base voltage is 10 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V.
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