| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 300 mA |
| Case/Package | SOT-23-3 |
| Polarity | NPN |
| Power Dissipation | 330 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Continuous Collector Current | 0.3A |
| hFE Min | 20000 @100mA, 5V |
| Input Power (Max) | 330 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Gain Bandwidth | 125MHz (Min) |
| Power Dissipation (Max) | 330 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Discontinued at Digi-Key |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 150℃ (TJ) |
If you require a higher current gain value in your circuit, then the NPN MMBTA14LT1HTSA1 Darlington transistor, developed by Infineon Technologies, is for you. This product"s maximum continuous DC collector current is 0.3 A, while its minimum DC current gain is 10000@10mA@5 V|20000@100mA@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 2@0.1mA@100mA V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
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