| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -800 mA |
| Case/Package | SOT-23-3 |
| Polarity | PNP |
| Power Dissipation | 0.33 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 100 @100mA, 1V |
| Input Power (Max) | 330 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 330 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Last Time Buy |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | 150℃ (TJ) |
Design various electronic circuits with this versatile PNP MMBTA56LT1HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
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