| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -300 V |
| Current Rating | -500 mA |
| Case/Package | SOT-23-3 |
| Polarity | PNP |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| hFE Min | 25 @30mA, 10V |
| Input Power (Max) | 300 mW |
| DC Current Gain (hFE) | 40 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Height | 0.98 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This specially engineered PNP MMBTA92-7-F GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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