TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 650 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 25.0 V |
Current Rating | 50.0 mA |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 225 mW |
Breakdown Voltage (Collector to Emitter) | 25 V |
hFE Min | 60 @4mA, 10V |
Input Power (Max) | 225 mW |
DC Current Gain (hFE) | 60 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Height | 0.93 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The MMBTH10 is a NPN RF Transistor designed for use in low-noise UHF/VHF amplifiers with collector currents in the 100µA to 30mA range in common emitter or common base mode of operation and in low frequency drift, high output UHF oscillators.
● 25V Collector-emitter voltage
● 30V Collector-base voltage
● 3V Emitter-base voltage
● 50mA Continuous collector current
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