| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 650 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 4.00 mA |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 225 mW |
| Breakdown Voltage (Collector to Emitter) | 25 V |
| hFE Min | 120 @4mA, 10V |
| Input Power (Max) | 225 mW |
| DC Current Gain (hFE) | 120 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 225 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBTH10-4LT1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 3 V. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 3 V.
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