| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 70.0 V |
| Current Rating | 200 mA |
| Capacitance | 0.5 pF |
| Case/Package | SOD-123 |
| Output Current | ≤200 mA |
| Forward Voltage | 1V @10mA |
| Polarity | Standard |
| Power Dissipation | 225 mW |
| Forward Current | 200 mA |
| Maximum Forward Voltage (Max) | 500 mV |
| Forward Current (Max) | 200 mA |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 125 ℃ |
| Power Dissipation (Max) | 225 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.84 mm |
| Size-Width | 1.8 mm |
| Size-Height | 1.25 mm |
| Operating Temperature | -55℃ ~ 125℃ |
The MMSD701T1G is a Schottky Barrier Diode features extremely low minority carrier lifetime and very low capacitance. The Schottky diode is designed primarily for high efficiency UHF and VHF detector applications. It is readily available to many other fast switching RF and digital applications.
● 225mW Forward power dissipation
● Low reverse leakage
● Halogen-free
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Diode Schottky 70V 0.2A 2Pin SOD-123 T/R
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Rectifier Diode, Schottky, 1 Element, 0.2A, 70V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
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ON SEMICONDUCTOR MMSD701T1G RF Schottky Diode, Barrier, Single, 70V, 200mA, 500mV, 0.5pF, SOD-123
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