| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -3.00 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1.5 V |
| Input Capacitance | 1.40 nF |
| Gate Charge | 46.0 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 5.60 A |
| Rise Time | 135 ns |
| Input Capacitance (Ciss) | 1400pF @16V(Vds) |
| Input Power (Max) | 2.5 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Increase the current or voltage in your circuit with this MMSF3P02HDR2G power MOSFET from ON Semiconductor. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
ON Semiconductor
10 Pages / 0.2 MByte
ON Semiconductor
9 Pages / 0.13 MByte
ON Semiconductor
8 Pages / 0.13 MByte
ON Semiconductor
1 Pages / 0.14 MByte
Motorola
Power Field-Effect Transistor, 5.6A I(D), 20V, 0.095ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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