TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 50.0 V |
Current Rating | 100 mA |
Case/Package | SOT-23-3 |
Power Rating | 246 mW |
Halogen Free Status | Halogen Free |
Polarity | NPN |
Power Dissipation | 246 mW |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 100mA |
hFE Min | 35 @5mA, 10V |
hFE Max | 35 |
Input Power (Max) | 246 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 400 mW |
Supply Voltage | 1.8 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.9 mm |
Size-Width | 1.3 mm |
Size-Height | 0.94 mm |
Operating Temperature | -55℃ ~ 150℃ |
The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO-236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
● Simplifies circuit design
● Compact board space
● Reduced component count
● AEC-Q101 qualified
● Base input resistor is 10Kohm
● Base emitter resistor is 10kohm
● Collector emitter voltage VCEO of 50VDC
● Continuous collector current of 100mAdc
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