| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 100 mA |
| Case/Package | SOT-23-3 |
| Polarity | NPN |
| Power Dissipation | 246 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 35 @5mA, 10V |
| hFE Max | 35 |
| Input Power (Max) | 246 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
Bias Resistor Transistor
●NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
●This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
●Features
●•Simplifies Circuit Design
●•Reduces Board Space and Component Count
●•Pb−Free Packages are Available
ON Semiconductor
17 Pages / 0.13 MByte
ON Semiconductor
31 Pages / 0.08 MByte
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