MOC207M Datasheet PDF - Fairchild

Description

●These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through the-board mounting.

●Features

●■U.L. Recognized (File #E90700, Volume 2)

●■VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOC205VM)

●■Closely Matched Current Transfer Ratios

●■Convenient Plastic SOIC-8 Surface Mountable Package Style

●■Minimum BVCEOof 70 V Guaranteed

●■Standard SOIC-8 Footprint, with 0.050" Lead Spacing

●■High Input-Output Isolation of 2500 VAC(rms) Guaranteed