MOC217R2M Datasheet PDF - ON Semiconductor

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting.

●Features

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● "Closely Matched Current Transfer Ratios

● Minimum BVCEO of 70 V Guaranteed

● MOC205M, MOC206M, MOC207M

● Minimum BVCEO of 30 V Guaranteed

● MOC211M, MOC212M, MOC213M, MOC216M,MOC217M

● Low LED Input Current Required for Easier Logic Interfacing

● MOC216M, MOC217M

● Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing

● Safety and Regulatory Approvals:

● UL1577, 2,500 VACRMS for 1 Minute

● DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage"