| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 6 Pin |
| Case/Package | DIP-6 |
| Number of Channels | 1 Channel |
| Number of Positions | 6 Position |
| Forward Voltage | 1.18 V |
| Power Dissipation | 330 mW |
| Isolation Voltage | 4170 Vrms |
| Holding Current | 220 µA |
| Forward Current | 60 mA |
| Input Voltage (Max) | 1.5 V |
| Output Voltage (Max) | 420 VAC |
| Input Current (Min) | 60 mA |
| Maximum Forward Voltage (Max) | 1.5 V |
| Forward Current (Max) | 60 mA |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 330 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bag |
| Operating Temperature | -40℃ ~ 85℃ |
The MOC3051M, MOC3052M and MOC3053M consist of a GaAs infrared emitting diode optically coupled to a non-zerocrossing silicon bilateral AC switch (triac). These devices isolate low voltage logic from 115 V lines to provide random phase control of high current triacs or thyristors. These devices feature greatly enhanced static dv/dt capability to ensure stable switching performance of inductive loads.
●Features
●---
● |
● Excellent IFT Stability—IR Emitting Diode Has Low Degradation
● 600 V Peak Blocking Voltage
● Safety and Regulatory Approvals
● UL1577, 4,170 VACRMS for 1 Minute
● DIN EN/IEC60747-5-5
ON Semiconductor
13 Pages / 0.38 MByte
ON Semiconductor
50 Pages / 1.22 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
27 Pages / 1 MByte
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