| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 6 Pin |
| Case/Package | PDIP-6 |
| Number of Channels | 1 Channel |
| Forward Voltage | 1.15 V |
| Input Current | 80 mA |
| Power Dissipation | 300 mW |
| Isolation Voltage | 7500 Vpk |
| Maximum Forward Voltage (Max) | 1.5 V |
| Forward Current (Max) | 80 mA |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bag |
| Operating Temperature | -40℃ ~ 100℃ |
The 4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
●Features
●---
● |
● High Voltage:
● MOC8204M, BVCEO= 400 V
● H11D1M, BVCEO= 300 V
● H11D3M, BVCEO= 200 V
● Safety and Regulatory Approvals:
● UL1577, 4,170 VACRMS for 1 Minute
● DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
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