TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 200 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -60.0 V |
Current Rating | -600 mA |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 1.5 W |
Breakdown Voltage (Collector to Emitter) | 60 V |
Continuous Collector Current | 0.6A |
hFE Min | 100 @150mA, 10V |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 50 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
ON Semiconductor has the solution to your circuit"s high-voltage requirements with their PNP MPS2907ARLRAG general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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