| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 12.0 V |
| Current Rating | 50.0 mA |
| Case/Package | TO-226-3 |
| Polarity | N-Channel |
| Power Dissipation | 850 mW |
| Breakdown Voltage (Collector to Emitter) | 12 V |
| hFE Min | 20 @8mA, 10V |
| Input Power (Max) | 350 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
RF Transistor NPN 12V 50mA 1.5GHz 350W Through Hole TO-92
ON Semiconductor
3 Pages / 0.04 MByte
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