| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 100 mA |
| Case/Package | TO-92-3 |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 25 V |
| Continuous Collector Current | 0.1A |
| hFE Min | 100 @10mA, 10V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use this versatile NPN MPS5172RLRMG GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.
ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
9 Pages / 0.15 MByte
ON Semiconductor
Trans GP BJT NPN 25V 0.1A 3Pin TO-92 Box
GE
Small Signal Bipolar Transistor
Central Semiconductor
Leaded Small Signal Transistor General Purpose
ROHM Semiconductor
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Continental Device
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.1A Ic, 100 - 500 hF
Micro Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
Taitron
Small Signal Bipolar Transistor,
National Semiconductor
TRANSISTOR,BJT,NPN,25V V(BR)CEO,100MA I(C),TO-92
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
