| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 75 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 2.00 A |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 2A |
| hFE Min | 75 @1A, 2V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 75 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Box |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Jump-start your electronic circuit design with this versatile NPN MPS650G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
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