| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 75 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 2.00 A |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Thermal Resistance | 83.3℃/W (RθJC) |
| Continuous Collector Current | 2A |
| hFE Min | 75 @1A, 2V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 75 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Bipolar (BJT) Transistor NPN 60V 2A 75MHz 625mW Through Hole TO-92-3
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