| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 75 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 2.00 A |
| Case/Package | TO-226-3 |
| Polarity | NPN |
| Power Dissipation | 0.625 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 2A |
| hFE Min | 75 @1A, 2V |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
If you require a general purpose BJT that can handle high voltages, then the NPN MPS651RLRMG BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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