| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 150 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 500 mA |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 100 @1mA, 5V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 80V 500mA 150MHz 625mW Through Hole TO-92-3
ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
9 Pages / 0.15 MByte
ON Semiconductor
1 Pages / 0.16 MByte
Central Semiconductor
Trans GP BJT NPN 80V 0.5A 3Pin TO-92 Box
Allegro MicroSystems
Small Signal Bipolar Transistor, 0.5A I(C), NPN,
Continental Device
0.625W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.5A Ic, 100 - 300 hFE
Samsung
60V, 500mA, NPN epitaxial silicon transistor
Susumu
Small Signal Bipolar Transistor, TO-92
New Jersey Semiconductor
Trans GP BJT NPN 80V 0.5A 3Pin TO-92 Box
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
