| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 100 @100mA, 1V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.58 mm |
| Size-Width | 3.86 mm |
| Size-Height | 4.58 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The MPSA05RA is a NPN Bipolar Transistor designed for general purpose amplifier applications at collector currents to 300mA.
● -55 to 150°C Junction temperature range
ON Semiconductor
4 Pages / 0.04 MByte
ON Semiconductor
7 Pages / 0.51 MByte
ON Semiconductor
2 Pages / 0.45 MByte
ON Semiconductor
Trans GP BJT NPN 60V 0.5A 3Pin TO-92 Bulk
Fairchild
Trans GP BJT NPN 60V 0.5A 3Pin TO-92 Bulk
Central Semiconductor
Bipolar Transistors - BJT Complementary Trans 60Vcbo 60Vceo 500mA
KEC(Korea Electronics)
Trans GP BJT NPN 60V 0.5A 3Pin TO-92
Diodes
TRANSISTOR 60V NPN TO92-3
Continental Device
NPN/PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
