TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 45.0 V |
Current Rating | 200 mA |
Case/Package | TO-92-3 |
Power Rating | 600 mW |
Polarity | NPN |
Power Dissipation | 625 mW |
Gain Bandwidth Product | 160 MHz |
Breakdown Voltage (Collector to Base) | 45.0 V |
Breakdown Voltage (Collector to Emitter) | 45 V |
Continuous Collector Current | 0.2A |
hFE Min | 500 @10mA, 5V |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use this versatile NPN MPSA18RLRAG GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 6.5 V. Its maximum power dissipation is 625 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6.5 V.
ON Semiconductor
5 Pages / 0.07 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
1 Pages / 0.16 MByte
Fairchild
Trans GP BJT NPN 45V 0.1A 3Pin TO-92 Bulk
Micro Electronics
Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
TI
45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
ROHM Semiconductor
Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ASC Capacitors
Film Capacitor, Polypropylene, 10% +Tol, 10% -Tol, 18uF, Chassis Mount, RADIAL LEADED
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.