| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 160 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 45.0 V |
| Current Rating | 200 mA |
| Case/Package | TO-226-3 |
| Polarity | NPN |
| Power Dissipation | 0.625 W |
| Breakdown Voltage (Collector to Emitter) | 45 V |
| Continuous Collector Current | 0.2A |
| hFE Min | 500 @10mA, 5V |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Look no further than ON Semiconductor"s NPN MPSA18RLRMG general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 6.5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6.5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ON Semiconductor
5 Pages / 0.07 MByte
ON Semiconductor
9 Pages / 0.19 MByte
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