| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 300 V |
| Current Rating | 500 mA |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Gain Bandwidth Product | 50 MHz |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 40 @30mA, 10V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 25 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN MPSA42RL1G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.
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6 Pages / 0.09 MByte
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Motorola
500mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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