| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-226-3 |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| hFE Min | 100 @100mA, 1V |
| Input Power (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 80V 500mA 50MHz 625mW Through Hole TO-92-3
ON Semiconductor
9 Pages / 0.38 MByte
Fairchild
Trans GP BJT PNP 80V 0.5A 3Pin TO-92 Ammo
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