| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -500 mA |
| Case/Package | TO-226-3 |
| Polarity | PNP |
| Power Dissipation | 0.625 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 100 @100mA, 1V |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their PNP MPSA56ZL1G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V.
ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
9 Pages / 0.19 MByte
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