| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| Continuous Collector Current | 0.3A |
| hFE Min | 80 @10mA, 10V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 25 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Box (TB) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Implement this versatile PNP MPSA92-AP GP BJT from Micro Commercial Components into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.
Micro Commercial Components
4 Pages / 0.24 MByte
Micro Commercial Components
13 Pages / 1.08 MByte
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