TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 40.0 V |
Current Rating | 1.00 A |
Case/Package | TO-226-3 |
Polarity | NPN |
Power Dissipation | 1000 mW |
Breakdown Voltage (Collector to Base) | 40.0 V |
Breakdown Voltage (Collector to Emitter) | 40 V |
Continuous Collector Current | 1A |
hFE Min | 60 @100mA, 1V |
Input Power (Max) | 1 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 40V 1A 50MHz 1W Through Hole TO-92 (TO-226)
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