| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 1.00 A |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 1A |
| hFE Min | 25000 @200mA, 5V |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 25000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 100MHz (Min) |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Amplify your current with the NPN MPSW45ARLRAG Darlington transistor, developed by ON Semiconductor. This Darlington transistor array"s maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@2mA@1A V. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 25000@200mA@5 V|15000@500mA@5V|4000@1A@5V. It has a maximum collector emitter saturation voltage of 1.5@2mA@1A V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 12 V.
ON Semiconductor
6 Pages / 0.11 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
1 Pages / 0.07 MByte
Motorola
One Watt Darlington Transistors
ASC Capacitors
Film Capacitor, Polypropylene, 5% +Tol, 5% -Tol, 4uF, Chassis Mount, RADIAL LEADED
National Semiconductor
TRANSISTOR,BJT,DARLINGTON,NPN,40V V(BR)CEO,1A I(C),TO-226AE
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
