| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 40.0 V |
| Current Rating | 1.00 A |
| Case/Package | TO-226-3 |
| Polarity | NPN |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 1A |
| hFE Min | 25000 @200mA, 5V |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 100MHz (Min) |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 5.21 mm |
| Size-Width | 4.19 mm |
| Size-Height | 7.87 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Higher current yields within your circuit is what you will get with ON Semiconductor"s NPN MPSW45G Darlington transistor. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 25000@200mA@5 V|15000@500mA@5V|4000@1A@5V. It has a maximum collector emitter saturation voltage of 1.5@2mA@1A V. This Darlington transistor array"s maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@2mA@1A V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 12 V.
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