| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 50 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -40.0 V |
| Current Rating | -1.00 A |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Thermal Resistance | 50℃/W (RθJC) |
| Continuous Collector Current | 1A |
| hFE Min | 60 @100mA, 1V |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Box |
| Material | Silicon |
| Size-Length | 5.21 mm |
| Size-Height | 7.87 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
ON Semiconductor has the solution to your circuit"s high-voltage requirements with their PNP MPSW51AG general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
ON Semiconductor
5 Pages / 0.09 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
1 Pages / 0.07 MByte
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