TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | Macro-X |
Power Dissipation | 1250 mW |
Breakdown Voltage (Collector to Emitter) | 15 V |
Gain | 13dB ~ 15.5dB |
hFE Min | 90 @50mA, 5V |
Input Power (Max) | 1.25 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 1250 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Bulk |
Size-Height | 2.54 mm |
Operating Temperature | 150℃ (TJ) |
RF Transistor NPN 15V 200mA 5GHz 1.25W Surface Mount Macro-X
Microsemi
6 Pages / 0.14 MByte
Microsemi
1 Pages / 0.08 MByte
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TRANS NPN 18V 200mA MACRO X
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Advanced Semiconductor
RF Small Signal Bipolar Transistor, 0.2A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN
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Trans RF BJT NPN 18V 0.2A 4Pin Macro-X
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Trans RF BJT NPN 15V 0.2A 8Pin SOIC T/R
Microsemi
Trans RF BJT NPN 15V 0.2A 8Pin SOIC T/R
Microsemi
Trans RF BJT NPN 18V 0.2A 4Pin Macro-X
Microsemi
Trans RF BJT NPN 15V 0.2A 8Pin SOIC
Microsemi
Trans RF BJT NPN 18V 0.2A 4Pin Macro-X
Microsemi
Trans RF BJT NPN 15V 0.2A 8Pin SOIC
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