MRF6V2300NBR1 Datasheet PDF - Freescale

RF Power Field Effect Transistors

●N--Channel Enhancement--Mode Lateral MOSFETs

●Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

●• Typical CW Performance: VDD=50Volts,IDQ= 900 mA,

●  Pout= 300 Watts, f = 220 MHz

●    Power Gain ó 25.5 dB

●    Drain Efficiency ó 68%

●• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power

●Features

●• Characterized with Series Equivalent Large--Signal Impedance Parameters

●• Qualified Up to a Maximum of 50 VDDOperation

●• Integrated ESD Protection

●• 225°C Capable Plastic Package

●• RoHS Compliant

●• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.